SciMater™ Single-sided Polished Monocrystalline Silicon Wafer (Prime grade)-SCI Materials Hub

SciMater™ Prime Grade Single-Side Polished Monocrystalline Silicon Wafer

High-quality monocrystalline silicon substrates for semiconductor processing, micro- and nanofabrication, photolithography, etching, thin-film deposition, MEMS, sensors, and materials research.

Prime Grade Precision Single-Side Polished 2–6 Inch Options N-Type / P-Type <100>/<111> Custom Parameters Available

Product Overview

SciMater™ Prime Grade Single-Side Polished Monocrystalline Silicon Wafers are manufactured from high-purity single-crystal silicon. One surface is precision chemical-mechanical polished to provide a flat, smooth, process-ready surface, while the back surface is typically lapped, etched, or finished according to the actual production batch.

These wafers are suitable for semiconductor devices, micro- and nanofabrication, thin-film deposition, photolithography, etching, MEMS, sensors, optoelectronics, and university research. Standard options include 2-inch, 3-inch, 4-inch, 5-inch, and 6-inch wafers, with N-type, P-type,<100>,<111>, multiple resistivity ranges, and special thicknesses available.

Prime Grade products emphasize material quality, polished-surface condition, geometric performance, and downstream process compatibility. Electrical parameters, thickness tolerance, TTV, Bow, Warp, and surface specifications are subject to the confirmed order or corresponding batch documentation.

Key Features

Prime Grade Quality Designed for research and microfabrication projects requiring high material purity, surface quality, and geometric performance.

Precision Single-Side Polishing The front surface offers good flatness and smoothness for photolithography, coating, deposition, and etching.

Monocrystalline Silicon Substrate Uniform crystal structure with N-type, P-type,<100>, and<111>options.

Multiple Wafer Sizes Available in common 2–6 inch laboratory and pilot-scale sizes for compatibility with equipment and fixtures.

Customizable Parameters Resistivity, thickness, oxide layer, cutting dimensions, packaging, and inspection documents can be confirmed.

Broad Process Compatibility Suitable for semiconductor, MEMS, sensors, microfluidics, thin-film, and optoelectronic research.

Product Size Comparison

Wafer Size	Nominal Diameter	Product Grade	Polishing	Conductivity Type	Common Orientation
2 Inch	Ø50.8 mm	Prime Grade	Single-Side Polished	N-Type / P-Type	<100>/<111>
3 Inch	Ø76.2 mm	Prime Grade	Single-Side Polished	N-Type / P-Type	<100>/<111>
4 Inch	Ø100 mm	Prime Grade	Single-Side Polished	N-Type / P-Type	<100>/<111>
5 Inch	Ø125 mm	Prime Grade	Single-Side Polished	N-Type / P-Type	<100>/<111>
6 Inch	Ø150 mm	Prime Grade	Single-Side Polished	N-Type / P-Type	<100>/<111>

Crystal orientation, resistivity, thickness, doping type, ultra-thin or extra-thick options, low- or high-resistivity grades, special flats or notches, and inspection documentation must be confirmed according to the specific batch and order.

Optional Technical Parameters

Parameter	Available Range or Description
Wafer Material	High-purity monocrystalline silicon
Product Grade	Prime Grade
Polishing	Single-side polished; the front is the primary process surface, and the back surface depends on the production batch
Conductivity Type	N-type or P-type; intrinsic undoped options may be confirmed separately
Dopant	Phosphorus is common for N-type and boron for P-type; final details follow the order or inspection documents
Crystal Orientation	<100>and<111>; other orientations may be available upon request
Resistivity	Low, standard, and high-resistivity ranges can be evaluated
Thickness	Standard, thin, thick, and custom thickness options
Surface Condition	Bare polished silicon by default; SiO₂, Si₃N₄, and metal coatings require separate customization
Orientation Feature	Primary flat, secondary flat, or notch according to wafer size and batch
Geometric Parameters	Thickness tolerance, TTV, Bow, and Warp can be confirmed according to project requirements
Cutting Services	Square, rectangular, circular, laser-scribed, special-shaped, and drilled parts
Packaging	Single-wafer box, multi-wafer box, vacuum packaging, clean bag, or customized packaging
Inspection Documents	Batch labels, parameter sheets, or inspection reports subject to actual supply conditions

TTV describes wafer thickness uniformity, while Bow and Warp describe the wafer's overall curvature and flatness. For high-precision photolithography, bonding, or device fabrication, acceptable limits should be clearly specified before ordering.

Prime Grade vs. Standard Laboratory / Test Grade

Comparison Item	Prime Grade SSP Silicon Wafer	Standard Laboratory / Test Grade Wafer
Product Positioning	Semiconductor processing, device fabrication, and demanding research projects	Teaching demonstrations, equipment setup, and general materials experiments
Surface Quality	Higher requirements for polished-surface quality and surface condition	May contain minor scratches, particles, or cosmetic defects
Geometric Performance	Greater emphasis on thickness, TTV, Bow, and Warp	Relatively relaxed geometric requirements
Parameter Completeness	Size, orientation, type, resistivity, and thickness are generally specified	Some products may be parameter-unknown or reclaimed/process wafers
Process Compatibility	Suitable for lithography, etching, deposition, oxidation, and device fabrication	Suitable for non-critical experiments or equipment testing
Purchase Cost	Relatively higher	Relatively lower

Main Applications

1. Semiconductor Devices and Integrated Circuits Base substrates for diodes, transistors, MOS devices, test structures, and other microelectronic devices.

2. Photolithography and Micro-/Nanofabrication Suitable for photoresist spin coating, exposure, development, wet etching, dry etching, and pattern transfer.

3. Thin-Film Deposition Compatible with magnetron sputtering, thermal evaporation, electron-beam evaporation, CVD, ALD, and spin coating.

4. MEMS and Sensor Fabrication Used for pressure sensors, microheaters, microelectrodes, micromechanical structures, and biosensors.

5. Optoelectronics and Optical Research Suitable for photodetectors, micro-/nano-optical structures, reflective films, filters, and photonic devices.

6. Microfluidics and Lab-on-a-Chip Can be used for microchannels and lab-on-a-chip platforms after lithography, etching, bonding, or surface modification.

7. Materials Characterization and Thin-Film Testing Substrates for Raman, XRD, SEM, AFM, ellipsometry, film-thickness, and contact-angle measurements.

8. Two-Dimensional Materials and Interface Research Used for 2D material transfer, heterojunction fabrication, surface modification, and interfacial bonding studies.

Selection Guide

Application Requirement	Recommended Selection
General material deposition, lithography, or teaching	2-inch or 3-inch Prime Grade SSP wafer
Standard micro-/nanofabrication and equipment compatibility	4-inch Prime Grade SSP wafer
Pilot-scale processing or larger-area thin films	5-inch or 6-inch Prime Grade SSP wafer
MOS, oxide-layer, or interface research	Confirm conductivity type, orientation, resistivity, and surface oxidation condition
Wet etching or orientation-dependent processing	Select<100>or<111>according to the etching process
Electrodes and electrical devices	Choose N-type or P-type according to the device design and confirm the resistivity range
High insulation or low-background-current testing	Choose high-resistivity or intrinsic undoped silicon wafers
Thin-film characterization or small-area experiments	Purchase full wafers for in-house dicing or order custom-cut pieces
High-precision lithography or wafer bonding	Confirm TTV, Bow, Warp, particle level, and surface-quality requirements

How to Use

1 Incoming Inspection Verify size, orientation, conductivity type, resistivity, and thickness; inspect packaging, edge chips, cracks, scratches, and contamination.

2 Clean Handling Wear powder-free gloves or finger cots and use a clean vacuum wand to handle the back surface or a non-critical area.

3 Cleaning and Surface Preparation Select cleaning, dehydration, native-oxide removal, or surface-activation procedures according to the downstream process.

4 Photoresist Coating and Lithography Center the wafer on the spin coater, confirm stable vacuum holding, and proceed with coating, exposure, and development.

5 Coating and Deposition Confirm wafer size, stage, and fixture compatibility; validate surface pretreatment on a small sample when necessary.

6 Etching Select wet or dry etching and protection methods according to crystal orientation, mask material, and target structure.

7 Dicing and Cutting Diamond scribing, mechanical dicing, or laser cutting may be used while controlling edge chipping, particles, and surface damage.

8 Sealed Storage Return unused products to a wafer box or clean package, keep them dry and dust-free, and retain batch identification.

When strong acids, strong alkalis, strong oxidizers, or other corrosive chemicals are involved, follow all applicable laboratory safety procedures and allow only trained personnel to operate in compliant facilities.

Storage and Maintenance

Item	Recommendation
Storage Environment	Keep dry and clean; avoid high humidity, high temperatures, and corrosive gases
Packaging	Keep unused wafers in the original package, wafer box, or clean vacuum bag
Surface Protection	Prevent the polished surface from rubbing against hard objects, plastic debris, or paper fibers
Handling and Transport	Use wafer boxes or dedicated carriers; avoid stacking bare wafers
Opened Packages	Use promptly after opening; reseal remaining wafers and retain batch information
Long-Term Storage	Use a clean, dry cabinet and minimize repeated opening to reduce particle contamination
Process Records	Record batch number, specifications, cleaning method, and process conditions for traceability

Bare silicon develops a native oxide layer after exposure to air. For experiments sensitive to interface chemistry, surface condition, or ultrathin-film deposition, define the cleaning, oxide-removal, and surface-pretreatment procedure in advance.

Recommended Ordering Information

To improve product selection and order confirmation efficiency, provide your requirements in the following format:

Size + Polishing + Conductivity Type + Crystal Orientation + Resistivity + Thickness + Quantity + Special Requirements

Example: 4 inch + single-side polished + P-type +<100>+ 1–10 Ω·cm + standard thickness + 25 wafers + individually packed

For custom cutting, also provide: cut size + thickness + cutting method + quantity + dimensional tolerance + cleaning requirement + packaging requirement.

FAQ

1. What does Prime Grade mean?

Prime Grade generally refers to high-quality polished monocrystalline silicon wafers intended for semiconductor devices, integrated circuits, and demanding research processes. The grade emphasizes material quality, polished-surface condition, geometric performance, and parameter completeness.

SciMater™ Prime Grade Single-Side Polished Silicon Wafer Price List

Size × Thickness × Conductivity Type × Crystal Orientation Price Matrix

N-type and P-type wafers are offered at the same price. Select the required size and crystal orientation from the table below.

Product Grade: Prime Grade Polishing: Single-Side Polished Conductivity Type: N-Type / P-Type Crystal Orientation:<100>/<110>/<111> Price Unit: USD / Wafer

Product Series	Size and Thickness	Conductivity Type	<100>Orientation	<110>Orientation	<111>Orientation
Square Silicon Pieces Prime Grade SSP Square Pieces N-type, P-type, and three common crystal orientations are available.	10 mm × 10 mm, 1 mm Thick	N-Type or P-Type	$14	$14	$14
	10 mm × 10 mm, 2 mm Thick	N-Type or P-Type	$17	$17	$17
	20 mm × 20 mm, 1 mm Thick	N-Type or P-Type	$20	$20	$20
	20 mm × 20 mm, 2 mm Thick	N-Type or P-Type	$38	$38	$38
Full Wafers Prime Grade SSP Full Wafers Available from 1 to 8 inches. N-type and P-type wafers are offered at the same price.	1 Inch (Ø25.4 mm)	N-Type or P-Type	$24	$24	$24
	2 Inch (Ø50.8 mm)	N-Type or P-Type	$42	$42	$42
	3 Inch (Ø76.2 mm)	N-Type or P-Type	$26	$26	$26
	4 Inch (Ø100 mm)	N-Type or P-Type	$74	$74	$74
	5 Inch (Ø125 mm)	N-Type or P-Type	$63	$63	$63
	6 Inch (Ø150 mm)	N-Type or P-Type	$38	$38	$38
	8 Inch (Ø200 mm)	N-Type or P-Type	$78	$78	$78

Selection method: first choose a square-cut piece or a full wafer, then confirm the conductivity type and crystal orientation. For the same size, N-type and P-type wafers in<100>,<110>, and<111>orientations are offered at the same price. USD prices are calculated as CNY prices divided by 5.

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