Monocrystalline silicon substrates with thermally grown silicon dioxide layers. Available as SSP single-side oxide, SSP double-side oxide, intrinsic SSP double-side oxide, and DSP double-side oxide products, including full wafers, circular pieces, square pieces, and customized cutting options.
SciMater™ SiO₂ Thermal Oxide Silicon Wafers use monocrystalline silicon as the substrate. A dense silicon dioxide layer is grown directly on the silicon surface through high-temperature thermal oxidation. Compared with deposited oxide films, thermally grown SiO₂ forms a strongly bonded interface with the silicon substrate and can function as an electrical insulation layer, dielectric layer, process mask, protective layer, or optical interference layer.
The oxide layer is tightly bonded to silicon and is suitable for insulation, dielectric, protective, and masking applications.
Available specifications cover 10 nm, 20 nm, 50 nm, 100 nm, 285 nm, 300 nm, and up to 7 μm.
Available as 2–6 inch full wafers, Ø10–Ø20 mm circular pieces, and common square-cut pieces.
Cutting dimensions, scribing format, substrate parameters, and oxide thickness may be confirmed according to project needs.
The table below combines the principal product structures, full-wafer sizes, oxide-thickness options, cut-piece formats, and recommended applications.
| Product Type | Polishing | Oxide Structure | Full-Wafer Sizes | Oxide Thickness | Cut-Piece Options | Core Feature | Recommended Applications |
|---|---|---|---|---|---|---|---|
| SSP Single-Side Oxide Wafer | SSP | Single-Side Oxide | 2 Inch4 Inch6 Inch | 20 nm50 nm100 nm200 nm285 nm300 nm500 nm1000 nm2000 nm | Ø10/15/20 mm; 5×5, 10×10, 15×15, and 20×20 mm | A clearly defined functional surface with a back side suitable for routine handling and mounting. | Thin-film deposition, 2D-material transfer, surface modification, and teaching experiments. |
| SSP Double-Side Oxide Wafer | SSP | Double-Side Oxide | 2 Inch4 Inch5 Inch6 Inch | 10 nm20 nm50 nm100 nm200 nm285 nm300 nm500 nm1000 nm2000 nm3 μm5 μm7 μm | Ø10/15/20 mm; 5×5, 10×10, 15×15, and 20×20 mm | Oxide on both sides for double-sided insulation and surface protection. | Micro-/nanofabrication, insulating substrates, wet processing, and double-side protection structures. |
| Intrinsic SSP Double-Side Oxide Wafer | Intrinsic SSP | Double-Side Oxide | 4 Inch | 100 nm285 nm300 nm | Confirmed by order | Intrinsic silicon substrate for reducing conductive-substrate interference in measurements. | Electrical testing, RF research, dielectric studies, and 2D-material devices. |
| DSP Double-Side Oxide Wafer | DSP | Double-Side Oxide | Currently supplied as circular cut pieces | 7 μm | Ø10 mm circular piece | Double-side polished and double-side oxidized for applications requiring flat functional surfaces on both sides. | Double-sided processing, optical experiments, precision mounting, and specialized device structures. |
| SSP Single-Side Oxide Square Pieces | SSP | Single-Side Oxide | Cut from 4-inch wafers | Confirmed by order | 10×10 mm; other dimensions customizable | Provides ready-to-use small pieces and reduces secondary dicing operations. | Chip experiments, material deposition, sample support, and compact fixtures. |
| SSP Single-Side Oxide Laser-Scribed Wafer | SSP | Single-Side Oxide | 4-inch laser-scribed wafer | Dimensions and oxide thickness customizable | Standard 10×10 mm scribing pattern | Allows customers to separate samples along the scribe lines while retaining full-wafer shipping protection. | Batch experiments, teaching samples, manual separation, and process verification. |
Suitable for interface studies, surface passivation, thin dielectric layers, and experiments sensitive to oxide thickness.
Suitable for micro-/nanofabrication, 2D-material observation, thin-film deposition, and routine insulating-substrate applications.
Suitable for enhanced insulation, improved surface isolation, and selected etch-mask applications.
Suitable for structures requiring thick electrical insulation, deep-etch masks, or specialized microfabrication.
Commonly used for optical observation and transfer of graphene, 2D materials, and ultrathin flakes.
Specify wafer size, substrate type, polishing, target oxide thickness, tolerance, and quantity.
For graphene, MXene, MoS₂, and other 2D-material transfer, alignment, and optical identification.
Compatible with evaporation, sputtering, spin coating, chemical deposition, and solution-based film preparation.
Suitable for photolithography, etching, masking, patterning, and microdevice process verification.
The SiO₂ layer isolates the silicon substrate and provides an insulating surface for electrodes, sensors, and devices.
Suitable for silanization, wetting control, molecular functionalization, and biointerface studies.
Different oxide thicknesses produce different interference colors for observing transparent or ultrathin materials.
Useful as a base substrate for gas, pressure, biological, and electrochemical sensors.
Suitable for semiconductor processing, materials preparation, thin-film analysis, and microfabrication education.
Choose an SSP single-side oxide wafer for straightforward front-side deposition, coating, and optical observation.
Choose an SSP double-side oxide wafer to reduce back-side conduction or contamination effects.
Choose an intrinsic SSP double-side oxide wafer and confirm the required resistivity before purchase.
Choose a DSP double-side oxide structure for double-sided processing, transmission testing, or precision mounting.
Choose circular or square cut pieces to reduce full-wafer waste and simplify mounting in small fixtures.
Choose a laser-scribed wafer so multiple small pieces can be separated along predefined scribe lines.
Verify the product label, polished surface, and oxide configuration before processing.
Wear powder-free gloves and hold the wafer edge with wafer tweezers or a vacuum wand.
Use clean nitrogen to blow the surface and select a compatible cleaning method when needed.
Place the wafer flat in the fixture and avoid concentrated edge force or local bending.
Set suitable conditions for deposition, spin coating, transfer, lithography, or etching.
Thick-oxide wafers and cut pieces are brittle; avoid bending, impact, and dropping.
Select a cleaning method compatible with the contaminant and the SiO₂ layer.
After cleaning and drying, place the sample in a wafer box or clean sample case.
Fingerprints and oils can affect film adhesion, wettability, electrical testing, and surface analysis.
Silicon is hard but brittle. Use suitable tweezers and avoid dropping or impact.
Fluoride-containing solutions and some strong alkalis can etch SiO₂. Evaluate compatibility before use.
High temperatures may affect the interface, film stress, and surface state.
SSP products have different front- and back-surface conditions. Confirm the target surface before processing.
Store in a clean, low-particle environment with individual spacers to reduce surface rubbing.
Small circular and square pieces have limited edge area and can break under excessive tweezer pressure.
Request batch documentation when strict oxide thickness, orientation, resistivity, or tolerance limits are required.
It is a monocrystalline silicon wafer processed in a high-temperature oxidizing environment so that a silicon dioxide layer grows on the silicon surface. The oxide can function as an insulation, dielectric, protective, masking, or optical interference layer.
Single-side oxide products are primarily intended for front-side experiments. Double-side oxide products have oxide layers on both surfaces for double-sided insulation, protection, or process isolation.
SSP is generally sufficient when deposition, coating, or material transfer is performed on one surface only. DSP is recommended for double-sided processing, double-sided observation, transmission testing, or applications requiring improved back-surface flatness.
They are commonly used for graphene and other 2D-material transfer and optical observation. Actual visibility also depends on the illumination, microscope, material thickness, and wafer batch.
Intrinsic silicon generally has a lower free-carrier concentration and is useful for electrical, RF, or dielectric studies that are sensitive to substrate conduction. Confirm the required resistivity before ordering.
Yes. SiO₂ is widely used for pattern transfer, insulation, and etch masking. Process conditions should be selected according to the oxide thickness, etchant, and target structure.
Fluoride-containing solutions can significantly etch SiO₂, and some strong alkaline systems may also affect it. Confirm chemical compatibility and treatment time before cleaning or etching.
Yes. Cut pieces are convenient for small-volume experiments, compact fixtures, film deposition, and material transfer. Inspect the edges and verify stable mounting before use.
Reuse is possible when the oxide has not been etched, scratched, contaminated, or thermally altered and when all residues can be removed. New or dedicated wafers are recommended for high-cleanliness experiments.
Confirm the product structure, full wafer or cut piece, dimensions, oxide thickness, single- or double-side oxide, SSP or DSP, crystal orientation, conductivity type, resistivity, wafer thickness, quantity, tolerances, and packaging.
Product type + full wafer or cut piece + dimensions + oxide thickness + single-side/double-side oxide + SSP/DSP + crystal orientation + conductivity type + resistivity + quantity + tolerance or packaging requirements.
SciMater™ SiO₂ Thermal Oxide Silicon Wafers include SSP single-side oxide, SSP double-side oxide, intrinsic SSP double-side oxide, DSP double-side oxide, custom-cut pieces, and laser-scribed wafers. Available oxide thicknesses range from 10 nm to 7 μm. These products are suitable for 2D-material transfer, thin-film deposition, micro-/nanofabrication, electrical devices, insulating substrates, optical research, and surface modification. Selection should focus on oxide configuration, polishing, oxide thickness, wafer dimensions, crystal orientation, conductivity type, and resistivity.
Covers single-side-polished double-side-oxide and double-side-polished double-side-oxide silicon wafers and cut pieces. All prices are shown in USD.
| Oxide System | Product Form | Size | Oxide Thickness / Specification | N-Type Double-Side Oxide | P-Type Double-Side Oxide | ||||
|---|---|---|---|---|---|---|---|---|---|
| <100> | <110> | <111> | <100> | <110> | <111> | ||||
| SSP Double-Side Oxide Specifications | |||||||||
| SSP Double-Side Oxide Single-Side Polished · Double-Side Oxidized Square pieces, circular pieces, processed wafers, and 2–8 inch full wafers. | Cut Piece | 5 × 5 mm | 300 nm | $5 | $5 | $5 | $5 | $5 | $5 |
| Cut Piece | Ø10 mm | 300 nm | $6 | $6 | $6 | $6 | $6 | $6 | |
| Cut Piece | 10 × 10 mm | 300 nm | $6 | $6 | $6 | $6 | $6 | $6 | |
| Cut Piece | Ø15 mm | 300 nm | $8 | $8 | $8 | $8 | $8 | $8 | |
| Cut Piece | 15 × 15 mm | 300 nm | $8 | $8 | $8 | $8 | $8 | $8 | |
| Cut Piece | Ø20 mm | 300 nm | $10 | $10 | $10 | $10 | $10 | $10 | |
| Cut Piece | 20 × 20 mm | 300 nm | $10 | $10 | $10 | $10 | $10 | $10 | |
| Full Wafer | 2 Inch | Thickness Not Specified | $34 | $34 | $34 | $34 | $34 | $34 | |
| Full Wafer | 3 Inch | Thickness Not Specified | $57 | $57 | $57 | $57 | $57 | $57 | |
| Full Wafer | 4 Inch | 10 nm | $69 | $69 | $69 | $69 | $69 | $69 | |
| Full Wafer | 4 Inch | 20 nm | $57 | $57 | $57 | $57 | $57 | $57 | |
| Full Wafer | 4 Inch | 50–2000 nm | $42 | $42 | $42 | $42 | $42 | $42 | |
| Full Wafer | 4 Inch | 7 μm | $180 | $180 | $180 | $180 | $180 | $180 | |
| Processed Wafer | 4 Inch | Approx. 55 SSP Pieces, 10 × 10 mm Laser-Scribed | $52 | $52 | $52 | $52 | $52 | $52 | |
| Processed Wafer | 4 Inch | Approx. 60 SSP Pieces, 10 × 10 mm Diced | $61 | $61 | $61 | $61 | $61 | $61 | |
| Full Wafer | 5 Inch | 5 μm | $108 | $108 | $108 | $108 | $108 | $108 | |
| Full Wafer | 6 Inch | 3 μm | $180 | $180 | $180 | $180 | $180 | $180 | |
| Full Wafer | 8 Inch | Thickness Not Specified | $116 | $116 | $116 | $116 | $116 | $116 | |
| DSP Double-Side Oxide Specifications | |||||||||
| DSP Double-Side Oxide Double-Side Polished · Double-Side Oxidized Double-side polished circular oxide silicon pieces. | Circular Piece | Ø10 mm | 7 μm | $22 | $22 | $22 | $22 | $22 | $22 |
Partial references citing our materials (from Google Scholar)
Carbon Dioxide Reduction
1. ACS Nano Strain Relaxation in Metal Alloy Catalysts Steers the Product Selectivity of Electrocatalytic CO2 Reduction
The bipolar membrane (Fumasep FBM) in this paper was purchased from SCI Materials Hub, which was used in rechargeable Zn-CO2 battery tests. The authors reported a strain relaxation strategy to determine lattice strains in bimetal MNi alloys (M = Pd, Ag, and Au) and realized an outstanding CO2-to-CO Faradaic efficiency of 96.6% with outstanding activity and durability toward a Zn-CO2 battery.
2. Front. Chem. Boosting Electrochemical Carbon Dioxide Reduction on Atomically Dispersed Nickel Catalyst
In this paper, Vulcan XC-72R was purchased from SCI Materials Hub. Vulcan XC 72R carbon is the most common catalyst support used in the anode and cathode electrodes of Polymer Electrolyte Membrane Fuel Cells (PEMFC), Direct Methanol Fuel Cells (DMFC), Alkaline Fuel Cells (AFC), Microbial Fuel Cells (MFC), Phosphoric Acid Fuel Cells (PAFC), and many more!
3. Adv. Mater. Partially Nitrided Ni Nanoclusters Achieve Energy-Efficient Electrocatalytic CO2 Reduction to CO at Ultralow Overpotential
An AEM membrane (Sustainion X37-50 Grade RT, purchased from SCI Materials Hub) was activated in 1 M KOH for 24 h, washed with ultra-purity water prior to use.
4. Adv. Funct. Mater. Nanoconfined Molecular Catalysts in Integrated Gas Diffusion Electrodes for High-Current-Density CO2 Electroreduction
In this paper (Supporting Information), an anion exchanged membrane (Fumasep FAB-PK-130 obtained from SCI Materials Hub (www.scimaterials.cn)) was used to separate the catholyte and anolyte chambers.
SCI Materials Hub: we also recommend our Fumasep FAB-PK-75 for the use in a flow cell.
5. Appl. Catal. B Efficient utilization of nickel single atoms for CO2 electroreduction by constructing 3D interconnected nitrogen-doped carbon tube network
In this paper, the Nafion 117 membrane was obtained from SCI Materials Hub.
In this paper, Proton exchange membrane (Nafion 117), Nafion D520, and Toray 060 carbon paper were purchased from SCI Materials Hub.
7. National Science Review Confinement of ionomer for electrocatalytic CO2 reduction reaction via efficient mass transfer pathways
An anion exchange membrane (PiperION-A15-HCO3) was obtained from SCI Materials Hub.
8. Catalysis Communications Facilitating CO2 electroreduction to C2H4 through facile regulating {100} & {111} grain boundary of Cu2O
Carbon paper (TGPH060), membrane solution (Nafion D520), and ionic membrane (Nafion N117) were obtained from Wuhu Eryi Material Technology Co., Ltd (a company under SCI Materials Hub).
Batteries
1. J. Mater. Chem. A Blocking polysulfides with a Janus Fe3C/N-CNF@RGO electrode via physiochemical confinement and catalytic conversion for high-performance lithium–sulfur batteries
Graphene oxide (GO) in this paper was obtained from SCI Materials Hub. The authors introduced a Janus Fe3C/N-CNF@RGO electrode consisting of 1D Fe3C decorated N-doped carbon nanofibers (Fe3C/N-CNFs) side and 2D reduced graphene oxide (RGO) side as the free-standing carrier of Li2S6 catholyte to improve the overall electrochemical performance of Li-S batteries.
This paper used more than 10 kinds of materials from SCI Materials Hub and the authors gave detailed properity comparsion.
The commercial IEMs of Fumasep FAB-PK-130 and Nafion N117 were obtained from SCI Materials Hub.
Gas diffusion layers of GDL340 (CeTech) and SGL39BC (Sigracet) and Nafion dispersion (Nafion D520) were obtained from SCI Materials Hub.
Zn foil (100 mm thickness) and Zn powder were obtained from the SCI Materials Hub.
Commercial 20% Pt/C, 40% Pt/C and IrO2 catalysts were also obtained from SCI Materials Hub.
3. Journal of Energy Chemistry Vanadium oxide nanospheres encapsulated in N-doped carbon nanofibers with morphology and defect dual-engineering toward advanced aqueous zinc-ion batteries
In this paper, carbon cloth (W0S1011) was obtained from SCI Materials Hub. The flexible carbon cloth matrix guaranteed the stabilization of the electrode and improved the conductivity of the cathode.
4. Energy Storage Materials Defect-abundant commercializable 3D carbon papers for fabricating composite Li anode with high loading and long life
The 3D carbon paper (TGPH060 raw paper) were purchased from SCI Materials Hub.
5. Nanomaterials A Stable Rechargeable Aqueous Zn–Air Battery Enabled by Heterogeneous MoS2 Cathode Catalysts
Nafion D520 (5 wt%), and carbon paper (GDL340) were received from SCI-Materials-Hub.
Carbon cloth (W0S1011) and other electrochemical consumables required for air cathode were provided by SCI Materials Hub.
Oxygen Reduction Reaction
1. J. Chem. Eng. Superior Efficiency Hydrogen Peroxide Production in Acidic Media through Epoxy Group Adjacent to Co-O/C Active Centers on Carbon Black
In this paper, Vulcan XC 72 carbon black, ion membrane (Nafion N115, 127 μL), Nafion solution (D520, 5 wt%), and carbon paper (AvCarb GDS 2230 and Spectracarb 2050A-1050) were purchased from SCI Materials Hub.
2. Journal of Colloid and Interface Science Gaining insight into the impact of electronic property and interface electrostatic field on ORR kinetics in alloy engineering via theoretical prognostication and experimental validation
The 20 wt% Pt3M (M = Cr, Co, Cu, Pd, Sn, and Ir) were purchased from SCI Materials Hub. This work places emphasis on the kinetics of the ORR concerning Pt3M (M = Cr, Co, Cu, Pd, Sn, and Ir) catalysts, and integrates theoretical prognostication and experimental validation to illuminate the fundamental principles of alloy engineering.
Water Electrolysis
1. International Journal of Hydrogen Energy Gold as an efficient hydrogen isotope separation catalyst in proton exchange membrane water electrolysis
The cathodic catalysts of Pt/C (20 wt%, 2–3 nm) and Au/C (20 wt%, 4–5 nm) were purchased from SCI Materials Hub.
2. Small Science Silver Compositing Boosts Water Electrolysis Activity and Durability of RuO2 in a Proton-Exchange-Membrane Water Electrolyzer
Two fiber felts (0.35 mm thickness, SCI Materials Hub) were used as the porous transport layers at both the cathode and the anode.
3. Advanced Functional Materials Hierarchical Crystalline/Amorphous Heterostructure MoNi/NiMoOx for Electrochemical Hydrogen Evolution with Industry-Level Activity and Stability
Anion-exchange membrane (FAA-3-PK-130) was obtained from SCI Materials Hub website.
Fuel Cells
1. Polymer Sub-two-micron ultrathin proton exchange membrane with reinforced mechanical strength
Gas diffusion electrode (60% Pt/C, Carbon paper) was purchased from SCI Materials Hub.
Characterization
1. Chemical Engineering Journal Electrochemical reconstitution of Prussian blue analogue for coupling furfural electro-oxidation with photo-assisted hydrogen evolution reaction
An Au nanoparticle film was deposited on the total reflecting plane of a single reflection ATR crystal (SCI Materials Hub, Wuhu, China) via sputter coater.
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