4H conductive N-type silicon carbide single-crystal substrates offer a wide bandgap, high breakdown field strength, strong thermal stability, and excellent potential for high-frequency applications. Full 2-inch, 4-inch, and 6-inch wafers and multiple square or rectangular cut-piece sizes are available for power electronics, optoelectronics, RF and microwave devices, epitaxial research, thin-film deposition, and semiconductor device development.
4H-SiC conductive N-type substrates are based on single-crystal silicon carbide and are suitable as foundational substrates for power semiconductors, RF devices, optoelectronic devices, and SiC epitaxial growth. Both full wafers and small cut pieces are available, allowing selection according to equipment stage size, experimental area, device dimensions, and processing requirements.
Suitable for power devices, high-frequency devices, epitaxy, and wide-bandgap semiconductor research.
Suitable for device structures requiring substrate conductivity, backside electrodes, or a vertical current path.
Available as full 2-inch, 4-inch, and 6-inch wafers and cut pieces ranging from 3 mm to 25 mm.
Compatible with cleaning, photolithography, etching, coating, electrode fabrication, and epitaxial-process evaluation.
All 4H conductive N-type SiC full wafers and cut pieces are listed in one table for easy comparison of size, thickness, and intended use.
| Product Category | Product Size | Polytype | Conductivity Type | Thickness | Description |
|---|---|---|---|---|---|
| Full Substrate Wafer | 2 Inch | 4H-SiC | Conductive N-Type | 800μm | Full Single-Crystal SiC Substrate |
| Full Substrate Wafer | 4 Inch | 4H-SiC | Conductive N-Type | 0.35mm | Full Single-Crystal SiC Substrate |
| Full Substrate Wafer | 6 Inch | 4H-SiC | Conductive N-Type | 0.625mm | Full Single-Crystal SiC Substrate |
| Square Cut Piece | 3mm×3mm | 4H-SiC | Conductive N-Type | 0.35mm | Small-Area Materials and Device Experiments |
| Square Cut Piece | 5mm×5mm | 4H-SiC | Conductive N-Type | 0.35mm | Thin-Film, Coating, and Small-Device Experiments |
| Rectangular Cut Piece | 5mm×10mm | 4H-SiC | Conductive N-Type | 0.35mm | Strip Electrode and Device-Structure Experiments |
| Square Cut Piece | 8mm×8mm | 4H-SiC | Conductive N-Type | 0.35mm | Materials Characterization and Thin-Film Deposition |
| Square Cut Piece | 10mm×10mm | 4H-SiC | Conductive N-Type | 0.35mm | Common Standard Small-Size Cut Piece |
| Rectangular Cut Piece | 10mm×20mm | 4H-SiC | Conductive N-Type | 0.35mm | Long-Format Device and Electrode Testing |
| Square Cut Piece | 15mm×15mm | 4H-SiC | Conductive N-Type | 0.35mm | Medium-Area Deposition and Device Fabrication |
| Square Cut Piece | 20mm×20mm | 4H-SiC | Conductive N-Type | 0.35mm | Larger-Area Thin-Film and Device Fabrication |
| Square Cut Piece | 25mm×25mm | 4H-SiC | Conductive N-Type | 0.35mm | Large-Area Research and Process Validation |
The following data come from provided inspection documentation and are shown only as examples of possible characterization items and report formats. They should not be treated as universal acceptance criteria for all product batches.
The example report uses multi-point X-ray diffraction measurements to evaluate crystal-orientation consistency and crystalline quality.
The example test contains 55 measurement points, with a reported maximum of approximately 0.02013 Ω·cm and a minimum of approximately 0.01832 Ω·cm.
In-plane resistivity mapping can be used to evaluate conductivity consistency across the wafer and process stability.
Color-scale and three-dimensional maps can reveal resistivity trends between edge and center regions.
For SBDs, MOSFETs, JFETs, and other high-voltage, high-frequency, and high-temperature power-device research.
Used as a base substrate for SiC epitaxial growth; surface grade, off-axis angle, and cleanliness must be confirmed.
Suitable for high-frequency devices, RF structures, microwave components, and related materials-process research.
Suitable for LEDs, ultraviolet optoelectronic devices, detectors, and other wide-bandgap optoelectronic research.
Can be used as a substrate for deposition of metals, oxides, nitrides, two-dimensional materials, and functional thin films.
Suitable for photolithography, etching, electrode fabrication, ion implantation, and micro-/nanodevice process validation.
Suitable for studying materials, electrodes, contacts, and device stability under high-temperature operating conditions.
For XRD, Raman, SEM, AFM, resistivity, and surface-morphology measurements.
For wide-bandgap semiconductor materials, power devices, and silicon carbide processing research.
Confirm size, thickness, polytype, conductivity type, polished surface, batch, and quantity.
Wear powder-free gloves and use a vacuum wand or dedicated tweezers suitable for hard, brittle materials.
Use the packaging label and parameter documentation to identify the polished surface; do not rely only on brightness.
Select an SiC-compatible cleaning process according to photolithography, coating, or epitaxial requirements.
Confirm that fixtures, vacuum chucks, and stages match the SiC size and thickness, and avoid concentrated mechanical stress.
After dehydration and surface preparation, proceed with spin coating, exposure, etching, and thin-film deposition.
Select the metal system, film thickness, and annealing process according to N-type SiC contact requirements.
Return unused products to a wafer box or clean carrier to prevent particles, scratches, and cross-contamination.
SiC is very hard but remains brittle; edge impact may cause chipping or fracture.
Do not allow the polished surface to contact ordinary paper, rough work surfaces, or sharp metal tools.
Open and process the substrate in a clean environment whenever possible to prevent dust from affecting epitaxy, photolithography, or coating.
Avoid excessive localized pressure from fixtures or vacuum chucks, especially for small cut pieces.
Before cleaning or etching, confirm the effects of the chemicals on SiC, surface coatings, and fixture materials.
Store in a sealed wafer box or clean carrier away from high humidity and corrosive gases.
A 4H conductive N-type silicon carbide substrate is a semiconductor substrate made from single-crystal 4H-SiC with N-type conductivity. It is commonly used for power devices, high-frequency devices, epitaxial growth, and wide-bandgap semiconductor research.
Conductive SiC supports significant current transport and is suitable for backside electrodes and vertical-conduction devices. Semi-insulating SiC has much higher resistivity and is typically used for RF isolation and low-parasitic substrate applications.
2-inch wafers are suitable for small-batch research and equipment validation; 4-inch wafers are suitable for general micro-/nanofabrication and medium-area processing; 6-inch wafers are suitable for larger-area processing and projects using large-wafer equipment.
Yes. Thickness affects mechanical strength, vacuum handling, heat-flow paths, processing depth, and package design. Confirm that the equipment stage, fixtures, and process chamber support the selected thickness.
Suitability for epitaxial growth depends on off-axis angle, surface roughness, polishing grade, defect level, and cleanliness. Epitaxial-grade acceptance parameters should be specified before purchase.
Yes. SiC substrates can undergo photolithography, etching, sputtering, evaporation, CVD, ALD, and electrode fabrication. The exact process should be selected according to surface condition, film system, and device design.
Select the size according to the fixture area, X-ray or laser spot, thin-film deposition area, device layout, and sample quantity. For general small-area experiments, 5 × 5 mm or 10 × 10 mm pieces are common choices.
Cutting hard, brittle materials may create some edge chipping, particles, or cutting marks. When edge quality and usable area are critical, specify the allowed chipping range and cutting tolerance in advance.
No. The average resistivity, uniformity, and rocking-curve FWHM shown on this page come from example inspection data and only illustrate available test items. Actual parameters are subject to the corresponding batch report.
Resistivity, orientation, thickness, XRD, surface-quality, and other documentation may be confirmed according to the product batch and order. Custom cutting, packaging, coating, and other processing requirements can also be evaluated.
Size + Full Wafer/Cut Piece + 4H Conductive N-Type + Thickness + Polishing + Off-Axis Angle + Target Resistivity + Quantity + Inspection Documents + Cutting and Packaging Requirements.
4H conductive N-type silicon carbide substrates are suitable for power electronics, RF and microwave devices, optoelectronics, SiC epitaxy, thin-film deposition, and semiconductor-device research. Small-area experiments may use 3 × 3 mm to 10 × 10 mm cut pieces, while larger-area processes may use 15 × 15 mm to 25 × 25 mm pieces. Full-wafer processing can use 2-inch, 4-inch, or 6-inch substrates according to equipment compatibility. Confirm size, thickness, polishing, off-axis angle, resistivity, surface grade, and inspection requirements before purchasing, and use the confirmed order and batch documentation as the final acceptance basis.
Covers 3 × 3 mm to 25 × 25 mm silicon carbide cut pieces, together with 2-inch and 4-inch wafer sizes, allowing quick price selection by size and thickness.
| Product Series | Size | Thickness | Price |
|---|---|---|---|
| 4H-N-Type Silicon Carbide Wafer Available as square cut pieces and inch-size wafers for wide-bandgap semiconductor, epitaxial-growth, and materials research. | 3 × 3 mm | 0.35 mm | $14 |
| 5 × 5 mm | 0.35 mm | $22 | |
| 5 × 10 mm | 0.35 mm | $34 | |
| 8 × 8 mm | 0.35 mm | $38 | |
| 10 × 10 mm | 0.35 mm | $40 | |
| 10 × 20 mm | 0.35 mm | $95 | |
| 15 × 15 mm | 0.35 mm | $95 | |
| 20 × 20 mm | 0.35 mm | $137 | |
| 25 × 25 mm | 0.35 mm | $162 | |
| 2 Inch | 800 μm | $144 | |
| 4 Inch | 0.35 mm | $286 |
Partial references citing our materials (from Google Scholar)
Carbon Dioxide Reduction
1. ACS Nano Strain Relaxation in Metal Alloy Catalysts Steers the Product Selectivity of Electrocatalytic CO2 Reduction
The bipolar membrane (Fumasep FBM) in this paper was purchased from SCI Materials Hub, which was used in rechargeable Zn-CO2 battery tests. The authors reported a strain relaxation strategy to determine lattice strains in bimetal MNi alloys (M = Pd, Ag, and Au) and realized an outstanding CO2-to-CO Faradaic efficiency of 96.6% with outstanding activity and durability toward a Zn-CO2 battery.
2. Front. Chem. Boosting Electrochemical Carbon Dioxide Reduction on Atomically Dispersed Nickel Catalyst
In this paper, Vulcan XC-72R was purchased from SCI Materials Hub. Vulcan XC 72R carbon is the most common catalyst support used in the anode and cathode electrodes of Polymer Electrolyte Membrane Fuel Cells (PEMFC), Direct Methanol Fuel Cells (DMFC), Alkaline Fuel Cells (AFC), Microbial Fuel Cells (MFC), Phosphoric Acid Fuel Cells (PAFC), and many more!
3. Adv. Mater. Partially Nitrided Ni Nanoclusters Achieve Energy-Efficient Electrocatalytic CO2 Reduction to CO at Ultralow Overpotential
An AEM membrane (Sustainion X37-50 Grade RT, purchased from SCI Materials Hub) was activated in 1 M KOH for 24 h, washed with ultra-purity water prior to use.
4. Adv. Funct. Mater. Nanoconfined Molecular Catalysts in Integrated Gas Diffusion Electrodes for High-Current-Density CO2 Electroreduction
In this paper (Supporting Information), an anion exchanged membrane (Fumasep FAB-PK-130 obtained from SCI Materials Hub (www.scimaterials.cn)) was used to separate the catholyte and anolyte chambers.
SCI Materials Hub: we also recommend our Fumasep FAB-PK-75 for the use in a flow cell.
5. Appl. Catal. B Efficient utilization of nickel single atoms for CO2 electroreduction by constructing 3D interconnected nitrogen-doped carbon tube network
In this paper, the Nafion 117 membrane was obtained from SCI Materials Hub.
In this paper, Proton exchange membrane (Nafion 117), Nafion D520, and Toray 060 carbon paper were purchased from SCI Materials Hub.
7. National Science Review Confinement of ionomer for electrocatalytic CO2 reduction reaction via efficient mass transfer pathways
An anion exchange membrane (PiperION-A15-HCO3) was obtained from SCI Materials Hub.
8. Catalysis Communications Facilitating CO2 electroreduction to C2H4 through facile regulating {100} & {111} grain boundary of Cu2O
Carbon paper (TGPH060), membrane solution (Nafion D520), and ionic membrane (Nafion N117) were obtained from Wuhu Eryi Material Technology Co., Ltd (a company under SCI Materials Hub).
Batteries
1. J. Mater. Chem. A Blocking polysulfides with a Janus Fe3C/N-CNF@RGO electrode via physiochemical confinement and catalytic conversion for high-performance lithium–sulfur batteries
Graphene oxide (GO) in this paper was obtained from SCI Materials Hub. The authors introduced a Janus Fe3C/N-CNF@RGO electrode consisting of 1D Fe3C decorated N-doped carbon nanofibers (Fe3C/N-CNFs) side and 2D reduced graphene oxide (RGO) side as the free-standing carrier of Li2S6 catholyte to improve the overall electrochemical performance of Li-S batteries.
This paper used more than 10 kinds of materials from SCI Materials Hub and the authors gave detailed properity comparsion.
The commercial IEMs of Fumasep FAB-PK-130 and Nafion N117 were obtained from SCI Materials Hub.
Gas diffusion layers of GDL340 (CeTech) and SGL39BC (Sigracet) and Nafion dispersion (Nafion D520) were obtained from SCI Materials Hub.
Zn foil (100 mm thickness) and Zn powder were obtained from the SCI Materials Hub.
Commercial 20% Pt/C, 40% Pt/C and IrO2 catalysts were also obtained from SCI Materials Hub.
3. Journal of Energy Chemistry Vanadium oxide nanospheres encapsulated in N-doped carbon nanofibers with morphology and defect dual-engineering toward advanced aqueous zinc-ion batteries
In this paper, carbon cloth (W0S1011) was obtained from SCI Materials Hub. The flexible carbon cloth matrix guaranteed the stabilization of the electrode and improved the conductivity of the cathode.
4. Energy Storage Materials Defect-abundant commercializable 3D carbon papers for fabricating composite Li anode with high loading and long life
The 3D carbon paper (TGPH060 raw paper) were purchased from SCI Materials Hub.
5. Nanomaterials A Stable Rechargeable Aqueous Zn–Air Battery Enabled by Heterogeneous MoS2 Cathode Catalysts
Nafion D520 (5 wt%), and carbon paper (GDL340) were received from SCI-Materials-Hub.
Carbon cloth (W0S1011) and other electrochemical consumables required for air cathode were provided by SCI Materials Hub.
Oxygen Reduction Reaction
1. J. Chem. Eng. Superior Efficiency Hydrogen Peroxide Production in Acidic Media through Epoxy Group Adjacent to Co-O/C Active Centers on Carbon Black
In this paper, Vulcan XC 72 carbon black, ion membrane (Nafion N115, 127 μL), Nafion solution (D520, 5 wt%), and carbon paper (AvCarb GDS 2230 and Spectracarb 2050A-1050) were purchased from SCI Materials Hub.
2. Journal of Colloid and Interface Science Gaining insight into the impact of electronic property and interface electrostatic field on ORR kinetics in alloy engineering via theoretical prognostication and experimental validation
The 20 wt% Pt3M (M = Cr, Co, Cu, Pd, Sn, and Ir) were purchased from SCI Materials Hub. This work places emphasis on the kinetics of the ORR concerning Pt3M (M = Cr, Co, Cu, Pd, Sn, and Ir) catalysts, and integrates theoretical prognostication and experimental validation to illuminate the fundamental principles of alloy engineering.
Water Electrolysis
1. International Journal of Hydrogen Energy Gold as an efficient hydrogen isotope separation catalyst in proton exchange membrane water electrolysis
The cathodic catalysts of Pt/C (20 wt%, 2–3 nm) and Au/C (20 wt%, 4–5 nm) were purchased from SCI Materials Hub.
2. Small Science Silver Compositing Boosts Water Electrolysis Activity and Durability of RuO2 in a Proton-Exchange-Membrane Water Electrolyzer
Two fiber felts (0.35 mm thickness, SCI Materials Hub) were used as the porous transport layers at both the cathode and the anode.
3. Advanced Functional Materials Hierarchical Crystalline/Amorphous Heterostructure MoNi/NiMoOx for Electrochemical Hydrogen Evolution with Industry-Level Activity and Stability
Anion-exchange membrane (FAA-3-PK-130) was obtained from SCI Materials Hub website.
Fuel Cells
1. Polymer Sub-two-micron ultrathin proton exchange membrane with reinforced mechanical strength
Gas diffusion electrode (60% Pt/C, Carbon paper) was purchased from SCI Materials Hub.
Characterization
1. Chemical Engineering Journal Electrochemical reconstitution of Prussian blue analogue for coupling furfural electro-oxidation with photo-assisted hydrogen evolution reaction
An Au nanoparticle film was deposited on the total reflecting plane of a single reflection ATR crystal (SCI Materials Hub, Wuhu, China) via sputter coater.
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