SciMater™ Conductive Coated Silicon Wafer-SCI Materials Hub

Product Overview

Metal-coated silicon wafers combine a monocrystalline silicon substrate with a functional surface film. They can be used for conductive contacts, electrode fabrication, sensors, micro-/nanofabrication, thin-film deposition, and optoelectronic testing. Each metal offers different conductivity, chemical stability, surface reactivity, and process compatibility, so selection should be based on the experimental environment, contact method, and device structure.

The nominal Au thickness for full wafers and Au cut pieces is 100 nm. The nominal thickness is 150 nm for the 4-inch Pt-coated wafer and 300 nm for the 4-inch Al-coated wafer. Film thicknesses for Pt, Ag, and Cu cut pieces, as well as Ti/Cr adhesion layers, were not specified in the original data and must be confirmed by batch or order. Si₃N₄ is an insulating dielectric film rather than a conductive metal film.

Multiple Film Materials

Available with Au, Pt, Ag, Cu, Al, Si₃N₄, and other functional films.

Full Wafers and Cut Pieces

Available as full 2–6 inch wafers and common cut-piece sizes from 5 mm to 20 mm.

Broad Experimental Compatibility

Suitable for electrodes, sensors, thin-film deposition, optoelectronic, and microelectronic research.

Configurable Specifications

Substrate, film thickness, adhesion layer, polishing, and packaging can be confirmed as required.

Film Material Characteristics

Gold-Coated Silicon Wafer

Offers good surface stability for electrodes, sensing, surface modification, microelectronics, and optical experiments.

Platinum-Coated Silicon Wafer

Provides good chemical resistance and thermal stability for electrochemical electrodes, catalysis, and high-temperature contact studies.

Silver-Coated Silicon Wafer

Combines strong electrical conductivity with optical response for electrodes, optics, and surface-enhanced studies.

Copper-Coated Silicon Wafer

Suitable for conductive interconnects, electrodes, and metal-film research; surface oxidation must be controlled during use and storage.

Aluminum-Coated Silicon Wafer

Suitable for electrodes, reflective films, microelectronics, and metal-film processing; a native oxide layer may form on the surface.

Si₃N₄

Silicon Nitride-Coated Wafer

An insulating dielectric film suitable for passivation, isolation, masking, MEMS, and micro-/nanofabrication.

Complete Product Specifications

Products with duplicate names and identical specifications have been consolidated. All full wafers and cut pieces are shown in one comparison table.

Product Category	Finished Size	Substrate / Polishing	Film Material	Nominal Film Thickness	Surface or Orientation	Primary Use
Full Metal-Coated Wafer	2 Inch	Silicon substrate; polishing to be confirmed	Au	100 nm	Confirm by Batch	Conductive electrodes, thin films, and device experiments
Full Dielectric-Coated Wafer	4 Inch	Silicon substrate; polishing to be confirmed	Si₃N₄	Not Specified	Insulating Silicon Nitride Film	Passivation, isolation, masking, and MEMS
Full Metal-Coated Wafer	4 Inch	Silicon substrate; polishing to be confirmed	Au	100 nm	Confirm by Batch	Conductive electrodes, sensing, and optoelectronic experiments
Full Metal-Coated Wafer	4 Inch	Silicon substrate; polishing to be confirmed	Pt	150 nm	Pt (111) Orientation Description	Conductive, electrochemical, and microelectronic testing
Full Metal-Coated Wafer	4 Inch	Silicon substrate; polishing to be confirmed	Al	300 nm	Confirm by Batch	Electrodes, reflective films, and microelectronic processing
Full Metal-Coated Wafer	6 Inch	Silicon substrate; polishing to be confirmed	Au	100 nm	Confirm by Batch	Large-area conductive and device processing
Gold-Coated Cut Piece	5 × 5 mm	Single-Side Polished Silicon	Au	100 nm	Single-Side Coated	Small-area electrode and materials experiments
Gold-Coated Cut Piece	8 × 8 mm	Single-Side Polished Silicon	Au	100 nm	Single-Side Coated	Sensing, coating, and conductivity experiments
Gold-Coated Cut Piece	10 × 10 mm	Single-Side Polished Silicon	Au	100 nm	Single-Side Coated	Common electrode and microdevice substrate
Gold-Coated Cut Piece	15 × 15 mm	Single-Side Polished Silicon	Au	100 nm	Single-Side Coated	Medium-area conductive and optoelectronic experiments
Gold-Coated Cut Piece	20 × 20 mm	Single-Side Polished Silicon	Au	100 nm	Single-Side Coated	Larger-area electrode and device processing
Platinum-Coated Cut Piece	10 × 10 mm	Silicon substrate; polishing to be confirmed	Pt	Not Specified	Confirm by Batch	Electrochemistry, catalysis, and electrode testing
Copper-Coated Cut Piece	5 × 5 mm	Silicon substrate; polishing to be confirmed	Cu	Not Specified	Confirm by Batch	Conductive interconnect and metal-film experiments
Copper-Coated Cut Piece	8 × 8 mm	Silicon substrate; polishing to be confirmed	Cu	Not Specified	Confirm by Batch	Conductive interconnect and metal-film experiments
Copper-Coated Cut Piece	10 × 10 mm	Silicon substrate; polishing to be confirmed	Cu	Not Specified	Confirm by Batch	Electrode, interconnect, and device research
Copper-Coated Cut Piece	15 × 15 mm	Silicon substrate; polishing to be confirmed	Cu	Not Specified	Confirm by Batch	Medium-area conductive-film experiments
Copper-Coated Cut Piece	20 × 20 mm	Silicon substrate; polishing to be confirmed	Cu	Not Specified	Confirm by Batch	Larger-area conductive-film experiments
Silver-Coated Cut Piece	5 × 5 mm	Silicon substrate; polishing to be confirmed	Ag	Not Specified	Confirm by Batch	Conductivity, optics, and surface experiments
Silver-Coated Cut Piece	10 × 10 mm	Silicon substrate; polishing to be confirmed	Ag	Not Specified	Confirm by Batch	Electrode, optical, and sensing research
Silver-Coated Cut Piece	15 × 15 mm	Silicon substrate; polishing to be confirmed	Ag	Not Specified	Confirm by Batch	Medium-area conductive and optical experiments
Silver-Coated Cut Piece	20 × 20 mm	Silicon substrate; polishing to be confirmed	Ag	Not Specified	Confirm by Batch	Larger-area electrode and optical experiments

Any listed prices correspond to standard reference configurations. Silicon size and thickness, conductivity type, crystal orientation, polishing, film thickness, thickness tolerance, adhesion layer, surface roughness, patterning, inspection documentation, and packaging may affect the final quotation.

Main Applications

Conductive Electrodes

For planar electrodes, contact electrodes, backside electrodes, and electrical test structures.

Electrochemistry and Catalysis

Au and Pt films can be used for electrochemical electrodes, catalysis, and interfacial-reaction research.

Sensors

Suitable for gas, biological, chemical, optoelectronic, and microsensor development.

Microelectronic Devices

For metal contacts, conductive interconnects, test structures, and micro-/nanodevice fabrication.

Optoelectronics and Optics

Suitable for reflective films, optical electrodes, surface enhancement, and photoelectric-conversion experiments.

Thin-Film and Materials Research

Can serve as a supporting substrate for two-dimensional materials, oxides, polymers, and other functional materials.

Surface Modification

Metal surfaces can support molecular immobilization, interface functionalization, and biosensing research.

MEMS and Micro-/Nanofabrication

Suitable for microelectrodes, microheaters, microstructures, and patterned-metal processing.

Materials Characterization

For SEM, AFM, Raman, contact-angle, resistance, and film-performance measurements.

Selection Guide

General Conductive Electrodes: Au-coated silicon is a common first choice. Confirm film thickness, adhesion layer, and electrical-contact method before use.
Electrochemical and Catalytic Experiments: Choose Pt- or Au-coated silicon and verify compatibility with the electrolyte, working potential, and cleaning procedure.
Cost-Sensitive Conductivity Experiments: Cu-coated silicon can be selected, but air exposure should be minimized and surface oxidation controlled.
Optical and Surface-Enhanced Applications: Choose Ag or Au according to the target wavelength and experimental design, and confirm surface-roughness requirements.
Reflective Films and Electrodes: Al-coated silicon may be used, with consideration of the native surface oxide layer.
Insulation and Passivation Layers: Choose Si₃N₄-coated silicon; it should not be treated as a conventional conductive metal film.
Small-Area Experiments: Choose 5 × 5 mm, 8 × 8 mm, or 10 × 10 mm cut pieces.
Larger-Area Processing: Choose 15 × 15 mm or 20 × 20 mm cut pieces, or full 2–6 inch wafers.

How to Use

Verify Product Parameters

Confirm size, film material, film thickness, coated side, substrate, and package label.

Clean Handling

Wear powder-free gloves and handle the edge using a vacuum wand or flat-tip tweezers.

Identify the Coated Side

Use the package identification; do not scratch the surface or use friction to identify the film.

Gentle Cleaning

Remove loose particles with clean nitrogen. Ordinary tissues should not be used directly on the surface.

Mounting and Fixturing

Use a compatible fixture and prevent clamp marks in the active metal-film area.

Establish Electrical Contact

Use probes, conductive adhesive, spring contacts, or patterned electrodes according to the experiment.

Perform Downstream Processing

Proceed with photolithography, etching, deposition, surface modification, or device testing as required.

Sealed Storage

After use, clean as appropriate and reseal the substrate in a clean carrier or package.

Handling, Cleaning, and Storage

Prevent Film Scratches

Do not rub the metal surface with sharp tweezers, ordinary tissues, or rough materials.

Prevent Fingerprint Contamination

Fingerprints and oils can affect electrical contact, surface modification, and subsequent coating.

Select Cleaning Agents Carefully

Chemical resistance varies by metal; confirm compatibility between the cleaning agent and the film before use.

Control Cu Surface Oxidation

Use Cu-coated silicon promptly after opening and keep it dry and sealed.

Protect Ag from Tarnishing

Keep silver-coated surfaces away from sulfur-containing environments and corrosive gases to reduce tarnishing and contamination.

Confirm High-Temperature Compatibility

High-temperature treatment may cause diffusion, oxidation, stress changes, or reduced film adhesion.

FAQ

1. What are the differences between Au-, Pt-, Ag-, and Cu-coated silicon wafers?

The metals differ in chemical stability, conductivity, surface activity, optical behavior, and process compatibility. Au is suitable for general electrodes and surface modification, Pt for electrochemistry and catalysis, Ag for conductivity and optical studies, and Cu for interconnects and cost-sensitive conductivity experiments.

2. Is there a Ti or Cr adhesion layer beneath the metal film?

The original specifications do not consistently identify an adhesion layer. Au, Pt, and other metals may require a Ti or Cr transition layer on silicon or SiO₂. Confirm the complete layer structure before ordering when it is important.

3. What is the film thickness of the Au-coated cut pieces?

The current 5 × 5 mm to 20 × 20 mm single-side polished Au-coated cut pieces are listed with a nominal Au thickness of 100 nm. Thickness tolerance and adhesion-layer details are subject to the corresponding batch or confirmed order.

4. What are the film thicknesses of the Pt-, Ag-, and Cu-coated cut pieces?

The source specifications do not state the exact film thicknesses for these cut pieces. Film thickness, tolerance, adhesion layer, and deposition method must be confirmed before purchase and should not be inferred from the full-wafer specifications.

5. What does 4-inch Pt (111) mean?

Pt (111) generally describes a crystallographic orientation characteristic of the platinum film. The degree of orientation, measurement method, and peak intensity are subject to the corresponding XRD or batch inspection data.

6. Can a metal-coated silicon wafer be used directly as an electrode?

It can be used as a conductive electrode or test substrate, but performance also depends on film thickness, film continuity, adhesion layer, surface contamination, contact method, and operating environment.

7. Can the metal surface undergo additional photolithography or coating?

Yes. Photolithography, patterning, secondary deposition, and surface modification are possible, but the effects of photoresist, developer, etchant, plasma treatment, and temperature on the existing metal film must be evaluated first.

8. How should Cu- and Ag-coated silicon wafers be stored?

Store them in a clean, dry, sealed environment with minimal exposure to air, high humidity, sulfur-containing gases, and corrosive gases. Use promptly after opening and reseal unused pieces.

9. Is a Si₃N₄-coated silicon wafer conductive?

Si₃N₄ is generally used as an insulating dielectric film, passivation layer, or etch mask and is not a conventional conductive film. For a conductive surface, choose a metal-coated wafer or fabricate separate electrodes.

10. Can the size, film thickness, and layer structure be customized?

Silicon-wafer size, cut dimensions, film material, film thickness, adhesion layer, single- or double-side coating, patterning, cleaning, inspection, and packaging can be evaluated according to project requirements.

Ordering Information

Recommended Inquiry Format

Full Wafer/Cut Piece + Size + Silicon Type and Polishing + Film Material + Film Thickness + Adhesion Layer + Single-/Double-Side Coating + Quantity + Inspection and Packaging Requirements.

Example: 10 × 10 mm + single-side polished silicon + Au 100 nm + confirm Ti/Cr adhesion layer + single-side coating + 20 pieces + individually packaged in clean carriers.

Product Summary

Au-, Pt-, Ag-, and Cu-coated silicon wafers can serve as conductive electrodes, thin-film substrates, and microelectronic-processing platforms for electrochemistry, sensors, optoelectronics, micro-/nanofabrication, and materials characterization. Au is suitable for general electrodes and surface modification, Pt for electrochemistry and catalysis, Ag for conductivity and optical research, and Cu for interconnect and metal-film experiments. Before purchasing, confirm substrate parameters, film thickness, adhesion layer, coated side, surface condition, and storage requirements, and use the confirmed order and batch documentation as the final acceptance basis.

Coating System	Size	Coating Specification	N-Type SSP Silicon			P-Type SSP Silicon
Coating System	Size	Coating Specification	Orientation 100	Orientation 110	Orientation 111	Orientation 100	Orientation 110	Orientation 111
Au-Coated SSP Au-Coated Silicon Covers small cut pieces and 2-, 4-, and 6-inch wafers.	5 × 5 mm	Au 100 nm	$8	$8	$8	$8	$8	$8
	8 × 8 mm		$10	$10	$10	$10	$10	$10
	10 × 10 mm		$14	$14	$14	$14	$14	$14
	15 × 15 mm		$34	$34	$34	$34	$34	$34
	20 × 20 mm		$57	$57	$57	$57	$57	$57
	2 Inch		$152	$152	$152	$152	$152	$152
	4 Inch		$286	$286	$286	$286	$286	$286
	6 Inch		$560	$560	$560	$560	$560	$560
Cu-Coated SSP Cu-Coated Silicon Available in square cut pieces from 5 × 5 mm to 20 × 20 mm.	5 × 5 mm	Cu Coating	$6	$6	$6	$6	$6	$6
	8 × 8 mm	Cu Coating	$8	$8	$8	$8	$8	$8
	10 × 10 mm	Cu Coating	$9	$9	$9	$9	$9	$9
	15 × 15 mm	Cu Coating	$12	$12	$12	$12	$12	$12
	20 × 20 mm	Cu Coating	$14	$14	$14	$14	$14	$14
Ag-Coated SSP Ag-Coated Silicon Available in multiple small Ag-coated silicon sizes.	5 × 5 mm	Ag Coating	$6	$6	$6	$6	$6	$6
	10 × 10 mm	Ag Coating	$10	$10	$10	$10	$10	$10
	15 × 15 mm	Ag Coating	$14	$14	$14	$14	$14	$14
	20 × 20 mm	Ag Coating	$18	$18	$18	$18	$18	$18
Pt-Coated SSP Pt-Coated Silicon Includes a small cut piece and a 4-inch Pt 150 nm wafer.	10 × 10 mm	Pt Coating	$22	$22	$22	$22	$22	$22
	4 Inch	Pt 150 nm	$384	$384	$384	$384	$384	$384
Silicon Nitride Film Si₃N₄-Coated Silicon 4-inch single-side polished silicon nitride-coated wafer.	4 Inch	Si₃N₄ Film	$107	$107	$107	$107	$107	$107
Al-Coated SSP Al-Coated Silicon 4-inch Al 300 nm single-side polished silicon wafer.	4 Inch	Al 300 nm	$221	$221	$221	$221	$221	$221